Heat treatment of indium tin oxide layers - after application to dielectric substrate, to lower specific resistance without reducing transparency

摘要

The process for prodn. of a device comprising a dielectric substrate bearing a layer of tin-doped indium oxide (ITO) in which after the ITO layer has been applied to the substrate, it is subjected to a heat treatment in which the ITO layer is heated for at least 10 sec. at a temp. of at least 800 deg.C but not higher than the temp. at which the etchability deteriorates to the extent that upon plasma etching of the ITO layer, other parts of the device could be damaged.