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High speed CMOS comparator with hysteresis

机译:具迟滞的高速CMOS比较器

摘要

A comparator circuit in accordance with the present invention includes a first stage (21, 27) which is a standard CMOS implementation of a differential amplifier. The differential outputs (3, 4) of the first stage are applied to the inputs of a second differential amplifier stage (32, 35) which is of the same design as the first stage. A hysteresis element (31) is added to the current mirror load (30, 34) of the second stage and is driven by an output (5) of the second stage. This second stage output (5) is applied to a threshold matching single-ended gain stage (40, 41). The output (7) of the gain stage (40, 41) is applied to a standard CMOS inverter (50, 51) which provides the final comparator output (8). The hysteresis element (31) is placed internally within the second stage (32, 35) to be driven by the second stage output (5) such that the voltage difference between the differential inputs (3, 4) to the second stage must exceed a preselected threshold voltage before the output (5) to the single-ended gain stage switches state.
机译:根据本发明的比较器电路包括第一级(21、27),其是差分放大器的标准CMOS实现。将第一级的差分输出(3、4)施加到与第一级具有相同设计的第二差分放大器级(32、35)的输入。磁滞元件(31)被添加到第二级的电流镜负载(30、34),并由第二级的输出(5)驱动。该第二级输出(5)被施加到阈值匹配单端增益级(40、41)。增益级(40、41)的输出(7)被施加到提供最终比较器输出(8)的标准CMOS反相器(50、51)。磁滞元件(31)内部放置在第二级(32、35)内,由第二级输出(5)驱动,使得第二级的差分输入(3、4)之间的电压差必须超过在输出(5)到单端增益级切换状态之前的预选阈值电压。

著录项

  • 公开/公告号EP0345621A3

    专利类型

  • 公开/公告日1991-03-13

    原文格式PDF

  • 申请/专利权人 NATIONAL SEMICONDUCTOR CORPORATION;

    申请/专利号EP19890109806

  • 发明设计人 MEADOWS WILLIAM H.;

    申请日1989-05-31

  • 分类号H03K3/023;H03K3/353;

  • 国家 EP

  • 入库时间 2022-08-22 05:53:37

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