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HIGH SPEED CMOS COMPARATOR WITH HYSTERESIS

机译:迟滞高速CMOS比较器

摘要

AbstractHIGH SPEED CMOS COMPARATOR WITH HYSTERESISA comparator circuit in accordance with thepresent invention includes a first stage which is astandard CMOS implementation of a differentialamplifier. The differential outputs of the firststage are applied to the inputs of a seconddifferential amplifier stage which is of the samedesign as the first stage. A hysteresis element isadded to the current mirror load of the second stageand is driven by an output of the second stage. Thissecond stage output is applied to a threshold matchingsingle-ended gain stage. The output of the gain stageis applied to a standard CMOS inverter which providesthe final comparator output. The hysteresis element isplaced internally within the second stage to be drivenby the second stage output such that the voltagedifference between the differential inputs to thesecond stage must exceed a preselected thresholdvoltage before the output to the single-ended gainstage switches state.
机译:抽象迟滞高速CMOS比较器根据比较器电路本发明包括第一阶段,其为差分的标准CMOS实现放大器。第一个的差分输出阶段应用于一秒钟的输入相同的差分放大器级设计为第一阶段。磁滞元素是添加到第二阶段的当前镜像负载并由第二级的输出驱动。这个第二阶段输出应用于阈值匹配单端增益阶段。增益级的输出用于标准的CMOS反相器最终的比较器输出。磁滞元件为内部放置在第二阶段以进行驱动由第二阶段输出,使电压差分输入之间的差第二阶段必须超过预选的阈值输出到单端增益之前的电压阶段切换状态。

著录项

  • 公开/公告号CA1315362C

    专利类型

  • 公开/公告日1993-03-30

    原文格式PDF

  • 申请/专利权人 NATIONAL SEMICONDUCTOR CORPORATION;

    申请/专利号CA19890601994

  • 发明设计人 MEADOWS WILLIAM H.;

    申请日1989-06-07

  • 分类号H03K3/023;H03K3/353;

  • 国家 CA

  • 入库时间 2022-08-22 05:08:52

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