Low temperature low pressure thermal CVD process for forming conformal group III and/or group V-doped silicate glass coating of uniform thickness on integrated structure

摘要

The disclosure relates to a low temperature low pressure process is disclosed for the formation of a layer of Group III and/or Group V-doped silicon oxide glass (30) of uniform thickness on a nonplanar surface of an integrated circuit structure (10) which comprises: flowing a gaseous mixture of a tetrethylorthosilicate (TEOS)-containing gas and an ozone (O₃)-containing gas in a volume ratio of 1:2 and a gaseous source of one or more Group III and/or Group V-containing dopants over an integrated circuit structure in a vacuum apparatus at a pressure of from about 20 to about 200 Torr, preferably from about 40 Torr to about 100 Torr, and a temperature of less than about 400°C to deposit a uniform thickness of Group III and/or Group V-doped silicon oxide glass on an integrated circuit structure.