Process for the deposition of microcrystalline solid particles from the gas phase by chemical vapour deposition

摘要

Process for the deposition of microcrystalline solids from the gas phase by means of chemical vapour deposition (CVD), in which the solid particles to be deposited are deposited, at a pressure in the range of 10-5 8 to 1 bar and with a directed gas flow, on a substrate heated to a temperature in the range of 450 to 1200 DEG C, the process gas being passed through a porous intermediate element having a thickness in the range of 2 to 30 mm and consisting of a material which is suitable for use at temperatures up to 2500 DEG C and which is present in the zone having a maximum energy content within the reactor, and is excited in the said intermediate element, after which deposition of the solid particles on the substrate takes place. …IMAGE…