Formation of titanium nitride on semiconductor wafer by reaction of titanium with nitrogen-bearing gas in an integrated processing system

摘要

A process is disclosed for forming a layer of titanium nitride on a semiconductor wafer which comprises forming a titanium layer on the wafer in a vacuum deposition chamber (40) in the substantial absence of oxygen-bearing gases; transferring the titanium-coated wafer to a sealed annealing chamber (50) without substantially exposing the newly formed titanium layer to oxygen-bearing gases; annealing the titanium-coated semiconductor wafer in a nitrogen-bearing atmosphere in the sealed annealing chamber (50), in the substantial absence of oxygen-bearing gases, at an annealing temperature of from 400°C up to below about 650°C to form a titanium nitride compound on the wafer; and further annealing the wafer at a temperature of from about 800°C to about 900°C to form a stable phase of stoichiometric titanium nitride (TiN) on the wafer. The resulting layer of titanium nitride may be patterned to form local interconnects on the wafer, as well as to provide barrier portions between underlying titanium silicide and metal contacts such as aluminum. In a preferred embodiment, the initial annealing temperature ranges from about 400°C up to below about 600°C whereby substantially all of the titanium will react with the nitrogen to form a titanium nitride compound on the wafer.