Single crystal silicon carbide growth - with modification type controlled by seed crystal crystallographic orientation

摘要

In singlee crystal SiC prodn. by sublimation and partial decomposition of pulverulent technical SiC crystals and growth on a seed crystal in a reaction vessel under protective gas using a low temp. gradient, the novelty is that (a) the 6H modification of SiC is produced by using a seed crystal of 6H, 4H, 15R or 3C polytype and by carrying out crystal growth on the (0001) side (Si side) of the polar c-axis or on the (iii) side (Si side) of the polar axis of the SiC seed crystal; or (b) the 4H modification of SiC is produced by using a seed crystal of 6H, 4H, 15R or 3C polytype and by carrying out crystal growth on the (000T) side (C-side) of the polar c-axis or on the (III) side (C-side) of the polar axis of the SiC seed crystal. USE/ADVANATGE - The single crystal SiC is useful as base material for devices (e.g. blue LEDs) and in opto-electronics, e.g. for MESFET, MOSFETs, thermistors, IMPATT diodes, diodes, photo-detectors, impedance changed and sensors. The required modification is obtained merely by crystallographice orientation control without the need for a seed crystal of matching modification.