Direct contact TAB method

摘要

An external contact method and package wherein one embodiment includes a semiconductor die having a plurality of metallization layers including a top metallization layer that is covered by a passivating layer. At least a portion of the passivating layer is removed to expose at least a portion of the top metallization layer. Once the top metallization layer is exposed, external contact means are press-fit directly into the exposed portion. In a high powered ECL circuit, the present invention eliminates or greatly decreases voltage drop problems along the power bus lines which cause logic errors if the voltage drop is too large.