INP-BASED LIQUID PHASE EPITAXIAL CRYSTAL GROWING METHOD

摘要

PURPOSE:To manufacture a light emitting element and a photodetector which have high quality and high reliability by regulating thickness of growth in one time to the prescribed amount or below, in the case of growing the crystal layer of an InP-based compd. semiconductor by a liquid phase epitaxial crystal growing method. CONSTITUTION:The crystal layers of an InP-based compd. semiconductor (e.g. In1-xGaxAs1-yPy performs lattice matching with an InP base plate within a range of a/a=0.1%, at room temp. and has composition wherein band gap wavelength is regulated to 1.3-1.5mum) having =0.5mum thickness and the same composition, are laminated on the InP single crystal base plate having (100)+ or -1 deg. face exponent of the base plate surface. In this liquid phase epitaxial crystal growth, growth of the crystal layers is plurally divided and performed. For example, an n-type clad layer 32, p-type active layers 33a, 33b, a p-type clad layer 41, and a p-type contact layer 35 are successively formed on the InP base plate 31. Thickness of growth in one time is regulated to =0.5mum.