PURPOSE:To obtain a high resolution detector comprising a large number of pixels by suppressing crosstalk between pixels. CONSTITUTION:An element isolating groove 7 is provided between photodiodes 6 formed on a p-Hg0.8Cd0.2Te layer 4. Moreover, a gate electrode 10 is formed via an insulating film 8. Since electrons generated in the p-Hg0.8Cd0.2Te layer 4 cannot pass through the element isolating groove 7, crosstalk can be suppressed through correspondence between the incident position of infrared beam and pixel on the one to one basis. Moreover, generation of recoupling current in the vicinity of groove can be suppressed by applying a voltage to a gate electrode 10 so that the periphery of groove is set to the accumulating condition and thereby generated electrons can be guided to the photodiode 6 effectively.
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