VAPOR PHASE EPITAXIAL GROWTH OF SINGLE CRYSTAL THIN FILM OF INORGANIC COMPOUND

摘要

PURPOSE:To carry out vapor phase epitaxial growth for prepg. thin film of III-V group single crystal and to retard generation of hillock, etc. in the thin film by supplying HCl with a specified flow rate to the upstream side of a zone for placing a single crystal substrate independently of transportation of the group IIIelement. CONSTITUTION:A plane susceptor having a single crystal substrate consisting of a same compd. as an aimed single crystal of III-V group compd. such as GaAs single crystal substrate, placed thereon, and quartz boat 4 contg. high-purity Ga are set to a specified position in a horizontal quartz epitaxial reactor 1. The region 6 for placing the single crystal substrate and the region 4 for setting the boat are held at each specified temp. by heating, and HCl for transporting Ga is supplied from a pipe 2, and gaseous V group element component, carrier gas, and dopant gas are supplied from a pipe 3. Simultaneously, gaseous HCl independent of the transportation of Ga is supplied with a flow rate corresponding to 0.05-0.3vol% basing on the flow rate of the whole gas from the pipe 5 to the upstream side of the region 6 for placing the single crystal substrate.