首页> 外国专利> PRODUCTION OF THIN VANADIUM PENTOXIDE FILM

PRODUCTION OF THIN VANADIUM PENTOXIDE FILM

机译:五氧化二钒薄膜的生产

摘要

PURPOSE:To facilitate the increase of the area of an element as well as to enable film formation by a simple process at a low cost by coating a substrate with a soln. prepd. by dissolving vanadium pentoxide and a reducing agent in an org. solvent and heating the coated substrate. CONSTITUTION:A substrate is coated with a soln. prepd. by dissolving vanadium pentoxide and a reducing agent in an org. solvent and the coated substrate is heated preferably at 300-600 deg.C. The reducing agent used is not especially limited and may be an inorg. reducing agent such as H2S, an alkali metal or lithium hydride or an org. reducing agent such as benzyl alcohol or hydrazine but a thermally decomposable org. reducing agent is preferably used so as to obtain a thin vanadium pentoxide film having high purity. Isobutyl alcohol, n-butyl alcohol or isopropyl alcohol well dissolving reduced vanadium and having moderate dryability at the time of film formation is preferably used as the org. solvent.
机译:目的:为了促进元件面积的增加,并通过用锡涂覆基板来以简单的方法以低成本进行成膜。准备通过在组织中溶解五氧化二钒和还原剂。溶剂并加热涂覆的基材。组成:基底上涂有一层锡。准备通过在组织中溶解五氧化二钒和还原剂。溶剂和涂覆的基材优选在300-600℃下加热。对所用的还原剂没有特别限制,可以是无机物。还原剂,例如H2S,碱金属或氢化锂或有机金属。还原剂,如苯甲醇或肼,但可热分解。为了获得高纯度的五氧化二钒薄膜,优选使用还原剂。优选使用能很好溶解溶解的钒并在成膜时具有中等干燥性的异丁醇,正丁醇或异丙醇作为有机溶剂。溶剂。

著录项

  • 公开/公告号JPH0426517A

    专利类型

  • 公开/公告日1992-01-29

    原文格式PDF

  • 申请/专利权人 TOSOH CORP;

    申请/专利号JP19900126654

  • 发明设计人 YAMAZOE NOBORU;MIURA NORIO;

    申请日1990-05-18

  • 分类号C01G31/02;

  • 国家 JP

  • 入库时间 2022-08-22 05:40:46

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