首页> 外国专利> METHOD AND DEVICE FOR CONTINUOUSLY FORMING FUNCTIONAL DEPOSITED FILM OF LARGE AREA BY MICROWAVE PLASMA CVD METHOD

METHOD AND DEVICE FOR CONTINUOUSLY FORMING FUNCTIONAL DEPOSITED FILM OF LARGE AREA BY MICROWAVE PLASMA CVD METHOD

机译:微波等离子体化学气相沉积法连续形成大面积功能沉积膜的方法和装置

摘要

PURPOSE:To confine microwave plasma in a film-forming space, to improve the stability and reproducibility of the microwave plasma as well as to enhance the utilization efficiency of raw gas for deposited film forming use by a method wherein a microwave energy is made to radiate substantially in parallel to the sidewalls of film-forming chambers. CONSTITUTION:A pair of microwave applicators 107 and 108 are provided in opposition to each other as prescribed, the tip parts of the applicators are respectively provided with microwave introducing windows 109 and 110 and dielectric sheets 117 and 118 are respectively provided on the surfaces of said microwave introducing windows. While a striplike member 101 is kept into a form curved cylindrically by rollers 102 and 103 for support and transfer use and rings 104 and 105 for support and transfer use, film-forming chambers 116 are continuously formed of the member 101. A microwave energy is made to radiate substantially in parallel to the member 101 constituting the sidewall of a film-forming space. Thereby, microwave plasma is confined in the film-forming space and a deposited film of an arbitrary film thickness can be deposited and formed with good evenness over a large area, for a long time and continuously.
机译:目的:将微波等离子体限制在成膜空间中,以提高微波等离子体的稳定性和可重复性,并通过使微波能量辐射的方法提高用于沉积膜形成的原料气的利用效率。基本上平行于成膜室的侧壁。组成:一对微波施加器107和108按照规定彼此相对,施加器的尖端部分分别设有微波引入窗口109和110,介电片117和118分别设置在所述微波施加窗口109和110上。微波炉介绍窗户。当带状构件101通过辊102和103用于支撑和转移用途以及环104和105用于支撑和转移用途而保持为圆柱形弯曲的形式时,成膜室116由构件101连续地形成。微波能是使其基本上平行于构成成膜空间的侧壁的构件101辐射。从而,微波等离子体被限制在膜形成空间中,并且可以长时间连续地在大面积上以良好的均匀性沉积和形成任意膜厚的沉积膜。

著录项

  • 公开/公告号JPH04164317A

    专利类型

  • 公开/公告日1992-06-10

    原文格式PDF

  • 申请/专利权人 CANON INC;

    申请/专利号JP19900292712

  • 发明设计人 KANAI MASAHIRO;SANO MASAFUMI;

    申请日1990-10-29

  • 分类号H01L21/205;C23C16/50;C23C16/511;C23C16/54;H01L31/04;

  • 国家 JP

  • 入库时间 2022-08-22 05:40:36

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号