HEAT TREATMENT OF NEUTRON-IRRADIATED SILICON SINGLE CRYSTAL

摘要

PURPOSE:To eliminate crystal defect generated by neutron irradiation and recover resistance by heat-treating a silicon single crystal subjected to neutron irradiation doping under a fixed condition. CONSTITUTION:A silicon single crystal subjected to neutron irradiation doping is heat treated at a temperature of 950-1200 deg.C for a fixed time (e.g. at a temperature of 1200 deg.C for =20min or at a temperature of 1000 deg.C for =120min). Thereby, crystal defect generated in the silicon single crystal by neutron irradiation is eliminated and stable practical resistance is recovered.