Heat treatment method of silicon single crystal wafer, heat treatment apparatus thereof, and silicon single crystal wafer and manufacturing method thereof

摘要

The number of monocrystalline silicon wafers to be treated in a single heat treatment process is increased. At the same time, diffusion heat treatment for forming a DZ layer, processing for generating and controlling BMD to provide an IG function, removal of COP in the wafer surface or wafer, The present invention is provided in a method for heat treatment of a single crystal silicon wafer in which dislocation and slip are suppressed in a high temperature heat treatment atmosphere when various heat treatments such as heat treatment for improving internal pressure are performed. The wafers are grouped into a group of 10 wafers, and the wafers are arranged in a stack. The wafers are inclined horizontally or at 0.5 to 5 degrees on a boat supporting the wafers at a plurality of points on the circumference of the wafers, Place the wafer. Thus, various heat treatments can be performed on the wafer, and the potential and slip of the wafer are prevented, so that the wafer is uniformly heat treated.