PROCEDURE FOR THE VALIDATION OF A HALF-LEADING INSTITUTION.

摘要

A method is disclosed for the self-aligned manufacture of a semiconductor device having island insulation obtained by thermal oxidation. An insulating layer (preferably of silicon oxide), a layer of silicon nitride, and a layer preferably of aluminum oxide are provided successively on the semiconductor surface. In the last-mentioned layer a basic mask is formed having apertures at the area of all the semiconductor zones to be formed and at the area of the island insulation zones. From this mask the various processes are carried out via a replica mask obtained in the nitride layer.