Metal-semiconductor-metal photodiode

摘要

A metal-semiconductor-metal photodiode comprises a semiconductor layer and a cathode electrode and an anode electrode which are formed on the semiconductor layer and are made of such mutually different electrode materials that the cathode electrode has a Schottky barrier height phi bn from a conduction band satisfying phi bnEg/2 and the anode electrode has a Schottky barrier height phi bp from a valence band satisfying phi bpEg/2, where Eg denotes the energy band gap.