首页> 外国专利> LATERAL BIPOLAR MAGNETOTRANSISTOR

LATERAL BIPOLAR MAGNETOTRANSISTOR

机译:横向双极磁晶体管

摘要

A bipolar lateral magnetotransis- tor comprises a semiconductor substrate (1) with conductivity of a first type and the following regions formed on the upper surface of the substrate (1) in consecutive order, and spaced apart: a first base region (2) with conductivity of the same type as the substrate (1); an inject region (3) with conductivity of a second type; a collector region (4) with conductivity of the second type; and a second base region (5) with conductivity of the first type, there being a second inject region (6), having conductivity of the second type, disposed on the other side of the first base region (2). A magnetic field B in direction 7 influences minority carriers injected from regions 3, 6 and hence the collector current. An output signal is derived from between the collector 4 and base 5. IMAGE
机译:双极横向磁晶体管包括具有第一类型导电性的半导体衬底(1)和在衬底(1)的上表面上连续形成并隔开的以下区域:第一基区(2)与基板(1)相同类型的导电性;具有第二类型导电性的注入区域(3);具有第二类型导电性的集电极区域(4);以及具有第一类型导电性的第二基极区域(5),在第一基极区域(2)的另一侧上设置具有第二类型导电性的第二注入区域(6)。方向7上的磁场B影响从区域3、6注入的少数载流子,从而影响集电极电流。从集电极4和基极5之间得到输出信号。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号