halbleiteranordnungen with improved strahlungstoleranz.

摘要

A semiconductor device comprises a layer of silicon (12) an insulating layer (11) and a bulk substrate (10), the insulating layer electrically insulating the silicon layer from the bulk substrate, the silicon layer having a conductive, non-contiguous sidewall (14), also insulated from the bulk substrate by the insulating layer. The semiconductive device has improved radiation tolerance due to peripheral shielding by the biasable conductive sidewall.