Semiconductor device with sea-of-gates array transistors on linear active region - has active region transistors connected via stop transistor gate so that stop transistor failure inhibits operation

摘要

The semiconductor device has a linear active region (1) across which a series of field effect transistors (T1 to T4) are fabricated. Stop transistors (T2) distributed along the row of transistors electrically isolate portions of the linear active region, dividing the transistor array into a number of separate sections. The transistors in the sections enclosed by the stop transistors are connected to the supply line (VDD) via an extension (6a) to the stop transistor gate line (5) so that if a failure occurs between the supply line and the stop transistor gate (G2), removing the stop transistors isolating capabilities, the transistors enclosed within the adjoining section will also have their power removed. Alternatively, the supply connection can be taken from the other side of the active region so that bridge defects will also result in power being removed from transistors in the enclosed section. ADVANTAGE - Improved circuit layout increases chances of detecting stop transistor failures and eases testing requirements.