Recrystallisation of amorphous silicon films at low temp. - uses an anneal to reduce the hydrogen and fluorine content before recrystallisation under ion-implantation

摘要

Polycrystalline semiconductor film is formed by ion-implantation. The process consists of deposition of an amorphous film using plasma-CVD, anneal of the film to remove absorbed H and/or F and finally recrystallisation using ion implantation. USE/ADVANTAGE - The processes can all be carried out at low temps. The anneal is carried out at 50-800 deg.C., i.e. at a lower temp. than the film deposition. The result of the additional anneal is to allow recrystallisation at lower temps. This allows the use of substrates previously not suitable, i.e. glass is used for Liq Crystal Displays (LCD) and is suitable for mfr. of 3-dimensional integrated app