Circuitry for controlled rate of power application to CMOS microcircuits

摘要

A method and circuitry for controlling the rate of power dissipation of CMOS microcircuits during start-up. In accordance with the invention, either the clock frequency or the duty cycle of clock activity is changed, from zero at the instant of application of the power supply voltage, to the final operating frequency or activity at the end of a warm-up period. As a result, transient temperature differentials between integrated circuit die and the substrates to which they are attached are minimized, increasing the reliability of the CMOS circuitry.