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Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth
Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth
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机译:在多阶段外延生长过程中利用重复的热循环来减少半导体中的位错
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摘要
Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.
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