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Photosensitive semiconductor device having radiation sensitive diodes and photocurrent amplification

机译:具有辐射敏感二极管和光电流放大的光敏半导体器件

摘要

A radiation-sensitive semiconductor device, more particularly but not exclusively a photo detection arrangement for determining the postion of a luminous spot, including a semiconductor body having at least two radiation-sensitive diodes and amplifying circuitry for the photocurrent generated by the luminous spot. The amplifying circuitry includes transistors arranged outside the area of the semiconductor body occupied by the radiation-sensitive diodes. Each transistor is assigned to and connected to a radiation-sensitive diode, while at least the active parts of the transistors are arranged more closely to each other in the semiconductor body than the diodes to which they are assigned. A focusing arrangement may advantageously incorporate such as semiconductor photodetector.
机译:辐射敏感的半导体器件,特别是但不是唯一地用于确定发光点位置的光电检测装置,包括具有至少两个辐射敏感二极管的半导体本体和用于由发光点产生的光电流的放大电路。放大电路包括布置在由辐射敏感二极管占据的半导体本体区域之外的晶体管。每个晶体管分配给并连接到辐射敏感二极管,而至少晶体管的有源部分在半导体本体中比分配给它们的二极管更紧密地布置。聚焦装置可以有利地结合例如半导体光电探测器。

著录项

  • 公开/公告号US5099126A

    专利类型

  • 公开/公告日1992-03-24

    原文格式PDF

  • 申请/专利权人 U.S. PHILIPS CORP.;

    申请/专利号US19900525284

  • 发明设计人 JOB F. P. VAN MIL;MARTINUS P. M. BIERHOFF;

    申请日1990-05-17

  • 分类号H01L27/14;

  • 国家 US

  • 入库时间 2022-08-22 05:23:09

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