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Edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure

机译:利用NbN / MgO / NbN薄膜结构的边缘几何结构超导隧道结

摘要

An edge defined geometry is used to produce very small area tunnel junctions (30) in a structure with niobium nitride superconducting electrodes (14, 28) and a magnesium oxide tunnel barrier (24). The incorporation of an MgO tunnel barrier with two NbN electrodes results in improved current-voltage characteristics, and may lead to better junction noise characteristics. The NbN electrodes are preferably sputter- deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250° to 500° C. for improved quality of the electrode.
机译:边缘限定的几何形状用于在具有氮化铌超导电极(14、28)和氧化镁隧道势垒(24)的结构中产生非常小面积的隧道结(30)。 MgO隧道势垒与两个NbN电极的结合可改善电流-电压特性,并可能导致更好的结噪声特性。优选地,溅射NbN电极,其中沉积在绝缘基板上的第一NbN电极保持在约250℃至500℃,以提高电极的质量。

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