Method of producing single crystal of high-pressure phase material

摘要

Disclosed herein is a method of producing a single crystal of a high- pressure phase material having a pressure region of at least 1000 atm. in an equilibrium state at 25° C. This method is characterized in that a plurality of single-crystalline plates (3, 16) of the high- pressure phase material, as a substrate on which growth is then caused. The plates are so formed that the crystal orientations thereof are substantially equal to each other. The plates are arranged so that single major surface (3a) thereof are substantially flush with each other and so that the crystal orientations thereof are substantially along the same direction to form the substrate (1). The growth takes place out of a vapor-phase whereby a single-crystalline layer (4) of the high-pressure phase material is formed on the substrate (2) by vapor-phase synthesis. According to the invention method, a single-crystalline layer (4) of the high-pressure phase material is integrally formed on the major surfaces (3a) of the plurality of single-crystalline plates (3, 16) high-pressure phase material whose major surfaces (3a) are substantially flush with each other. Thus, it is possible to easily obtain a homogeneous and large- sized single crystal of the high-pressure phase material having a large cross sectional area.