Method of microarea analysis with a focused cesium ion beam

摘要

Cs LMIS with pure Cs or a cesium compound as a source material is specifically employed in a FIB so that the total ion current I.sub.T at the time of ion emission is not greater than 5 &mgr;A, whereby the current density distribution of a Cs FIB exhibits a sharp peak and the tailing of the distribution is reduced. By setting the I.sub.T in the range of 0.1 to 2 &mgr;A, a high current density of a Cs.sup.+ FIB whose diameter is 0. 1 &mgr;m is formed. The FIB is particularly used in secondary ion mass spectrometry analysis of a semiconductor material in electronic device manufacturing.