Integrated circuit that combines multi-epitaxial power transistors with logic/analog devices, and a process to produce same

摘要

An integrated circuit is formed on an N-type semiconductor wafer having a first N-type epitaxial layer on the substrate, a P-type epitaxial layer over the first N-type epitaxial layer, and a second N- type epitaxial layer over the P-type epitaxial layer. There are also a plurality of sets of P-type isolation regions separating the P-type epitaxial region and the surface of the second N-type epitaxial region into epitaxial tank regions for formation of bipolar and CMOS devices, combining high power, low power, logic, switching, analog, high current, low current, digital, and linear bipolar transistors along with CMOS transistors. The characteristics of the different type of devices are combined into a single process flow.