Complementary field effect transistors having strained superlattice structure

摘要

The carrier mobilities for both electrons and holes in complementary field effect transistor structures such as CMOS and CMOD devices are increased by using strained Ge.sub.x Si.sub.1-x /Si layers for the carrier conduction channels. The carrier mobilities for the holes and electrons can be of substantially the same magnitude which is advantageous for complementary logic applications. The complementary FET structures can be advantageously employed with bipolar devices in integrated circuits.