首页> 外国专利> PRODUCTION OF SN-DOPED IN2O3 POWDER HAVING LOW ELECTRICAL RESISTANCE

PRODUCTION OF SN-DOPED IN2O3 POWDER HAVING LOW ELECTRICAL RESISTANCE

机译:低电阻的掺SN的In2O3粉末的生产

摘要

PURPOSE:To prepare SnO2-doped In2O3 powder having low electrical resistance, by adjusting the pH of an aqueous solution containing an indium salt and stannous chloride at a specific ratio with oxalic acid and ammonia, and sintering the resultant precipitate under a specific condition. CONSTITUTION:Oxalic acid is added to an aqueous solution containing a water- soluble indium salt such as chloride, sulfate, etc. and stannous chloride at a ratio to obtain a product having an Sn-content of 0.1-20%. After the reaction, ammonia is added to the reaction mixture to adjust the pH to 0-2. The obtained precipitate is separated by filtration, washed thoroughly, dried, and sintered at 400-800 deg.C in an oxidizing atmosphere such as air. An electrically conductive SnO2-doped In2O3 fine powder having an electrical resistance of as low as about =100OMEGA.cm can be prepared by this method.
机译:用途:要制备低电阻的掺SnO2的In2O3粉末,方法是将草酸和氨水以特定比例调节含有铟盐和氯化亚锡的水溶液的pH,并在特定条件下烧结所得沉淀。组成:将草酸按一定比例添加到含有水溶性铟盐(如氯化物,硫酸盐等)和氯化亚锡的水溶液中,得到锡含量为0.1-20%的产品。反应后,将氨加入反应混合物中以将pH调节至0-2。通过过滤分离得到的沉淀物,充分洗涤,干燥并在400-800℃的氧化气氛如空气中烧结。可以通过这种方法制备电阻低至约≤100Ω·cm的导电的SnO 2掺杂的In 2 O 3细粉。

著录项

  • 公开/公告号JPH0563412B2

    专利类型

  • 公开/公告日1993-09-10

    原文格式PDF

  • 申请/专利权人 MITSUBISHI MATERIALS CORP;

    申请/专利号JP19840038491

  • 发明设计人 YAJIMA KENJI;WATANABE KYOYOSHI;

    申请日1984-03-02

  • 分类号C01G19/00;C01G15/00;

  • 国家 JP

  • 入库时间 2022-08-22 05:21:08

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