首页> 外国专利> SIMULTANEOUS FORMATION OF FILMS BY SPUTTERING ON PLURAL SUBSTRATES AND DEVICE THEREFOR AND SYSTEM FOR SIMULTANEOUSLY FORMING FILMS ON PLURAL SUBSTRATES

SIMULTANEOUS FORMATION OF FILMS BY SPUTTERING ON PLURAL SUBSTRATES AND DEVICE THEREFOR AND SYSTEM FOR SIMULTANEOUSLY FORMING FILMS ON PLURAL SUBSTRATES

机译:通过溅射在多个衬底上同时形成薄膜及其装置和用于在多个衬底上同时形成薄膜的装置和系统

摘要

PURPOSE: To efficiently and simultaneously stick sputtered particles to plural substrates at a uniform film thickness. ;CONSTITUTION: Magnetic lines of force are repulsed by each other and are formed as flattened magnetic lines of force if the distances between the substrates 4 and targets 13 are set at 1.5 to 2/5 the diameter of the substrates 4 and currents of the same polarity are passed to coils 11a to 11c. Plasma can eventually be generated stably in the central parts of the targets 13 as well and the formation of the films by sputtering in the central parts of the targets 13 is possible. On the other hand, the films can be formed stably by sputtering even in the outer peripheral parts of the targets 13 if the currents of the same polarity are passed to the coils 11a, 11b and the current of the reverse polarity is passed to the coil 11c.;COPYRIGHT: (C)1993,JPO&Japio
机译:目的:以有效且同时将溅射的粒子以均匀的膜厚粘附到多个基板上。 ;构成:如果基板4和靶材13之间的距离设置为基板4的直径的1.5倍至2/5,并且电流相同,则磁力线彼此排斥并且形成为扁平的磁力线。极性传递到线圈11a至11c。最终也可以在靶13的中央部分稳定地产生等离子体,并且可以通过溅射在靶13的中央部分形成膜。另一方面,如果相同极性的电流通过线圈11a,11b,相反极性的电流通过线圈,则即使在靶材13的外周部也可以通过溅射法稳定地成膜。 11c .;版权:(C)1993,JPO&Japio

著录项

  • 公开/公告号JPH05271924A

    专利类型

  • 公开/公告日1993-10-19

    原文格式PDF

  • 申请/专利权人 HITACHI LTD;

    申请/专利号JP19920074175

  • 发明设计人 SAITO YUTAKA;SASAKI SHINJI;

    申请日1992-03-30

  • 分类号C23C14/35;H01F41/18;

  • 国家 JP

  • 入库时间 2022-08-22 05:20:29

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