AlAs zinc diffusion stop layer in the semiconductor laser diode of AlGaAs-based

摘要

PURPOSE: To obtain an AlAs zinc diffusion stop layer of a laser diode by increasing an Al content in the stop layer. CONSTITUTION: A remainder of a semiconductor laser diode 48 which is other than an n+ -GaAs carrier layer 50 is made up of a series of individual semiconductor layers having predetermined thickness and doping types, layers of which include ohmic metal connection parts 62 and 64, positioned on a bottom and top of the AlGaAs-based semiconductor laser diode 48 respectively and isotropically arranged on the n+ -GaAs carrier layer 50. Al contents of a p- AlGaAs zinc diffusion stop layer 56 and a p-AlGaAs cladding layer 58 are 85-100% and 55-75% and preferably 100% and 60% respectively. Since the zinc diffusion stop layer having high Al content is used in this way, Zn diffusion can be stopped at any position within the p-AlGaAs cladding layer, without deteriorating the laser performance.