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METHOD AND DEVICE FOR MANUFACTURING HIGH CONDUCTIVE TRANSPARENT FILM OF INDIUM OXIDE, TO WHICH TIN AND FLUORINE ARE DOPED, BY APCVD
METHOD AND DEVICE FOR MANUFACTURING HIGH CONDUCTIVE TRANSPARENT FILM OF INDIUM OXIDE, TO WHICH TIN AND FLUORINE ARE DOPED, BY APCVD
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机译:用APCVD制造掺杂锡和氟的氧化铟的高导电透明膜的方法和装置
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摘要
PURPOSE: To form indium oxide film having excellent electric conductivity and visible light transparency by continuously transporting gases to plural shut off chambers from an in-chamber atmosphere and executing heating, preprocessing and film forming. ;CONSTITUTION: Substrates placed on a transporting machine belt 12 are introduced into a muffle 17 through a nitrogen curtain 18 for wiping and are heated by a heater 26 in an enclosure. The substrates are introduced through the next curtain 18 into a fore process chamber 28 where SiO2 films are applied thereon. Further, the substrates are introduced into a main reaction chamber 30 shut off by a curtain 18 where fluorine-contg. indium tin oxide films are applied on the substrates. Further, conductive films are applied on the substrates in a post process chamber 32. The substrates are led out through the curtain 18 and are cooled as the substrates approach a removal position 16.;COPYRIGHT: (C)1992,JPO
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