首页> 外国专利> METHOD AND DEVICE FOR MANUFACTURING HIGH CONDUCTIVE TRANSPARENT FILM OF INDIUM OXIDE, TO WHICH TIN AND FLUORINE ARE DOPED, BY APCVD

METHOD AND DEVICE FOR MANUFACTURING HIGH CONDUCTIVE TRANSPARENT FILM OF INDIUM OXIDE, TO WHICH TIN AND FLUORINE ARE DOPED, BY APCVD

机译:用APCVD制造掺杂锡和氟的氧化铟的高导电透明膜的方法和装置

摘要

PURPOSE: To form indium oxide film having excellent electric conductivity and visible light transparency by continuously transporting gases to plural shut off chambers from an in-chamber atmosphere and executing heating, preprocessing and film forming. ;CONSTITUTION: Substrates placed on a transporting machine belt 12 are introduced into a muffle 17 through a nitrogen curtain 18 for wiping and are heated by a heater 26 in an enclosure. The substrates are introduced through the next curtain 18 into a fore process chamber 28 where SiO2 films are applied thereon. Further, the substrates are introduced into a main reaction chamber 30 shut off by a curtain 18 where fluorine-contg. indium tin oxide films are applied on the substrates. Further, conductive films are applied on the substrates in a post process chamber 32. The substrates are led out through the curtain 18 and are cooled as the substrates approach a removal position 16.;COPYRIGHT: (C)1992,JPO
机译:用途:通过将气体从室内空气连续输送到多个关闭腔室并进行加热,预处理和成膜,以形成具有优异导电性和可见光透明性的氧化铟膜。组成:放置在运输机皮带12上的基板通过氮气帘18进入马弗炉17进行擦拭,并由外壳中的加热器26加热。将基板通过下一幕18引入到前处理腔室28中,在其上施加SiO 2 膜。进一步地,将基板引入到主反应室30中,该主反应室30由在其中含氟的帘18关闭。铟锡氧化物膜被施加在基底上。此外,将导电膜施加在后处理室32中的基板上。基板穿过帘18被引出并且随着基板接近移出位置16而被冷却。版权所有:(C)1992,JPO

著录项

  • 公开/公告号JPH04337077A

    专利类型

  • 公开/公告日1992-11-25

    原文格式PDF

  • 申请/专利权人 WATKINS JOHNSON CO;

    申请/专利号JP19920053519

  • 发明设计人 BURUUSU EDOUIN MEIYAA;

    申请日1992-03-12

  • 分类号C23C16/40;C03C17/00;C03C17/245;C23C16/448;C23C16/453;C23C16/54;

  • 国家 JP

  • 入库时间 2022-08-22 05:18:00

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