PURPOSE: To make compatible both advantages of an organic film resist and an SiO2 film for a micro processing mask in a process of etching silicon. ;CONSTITUTION: When plasma etching is applied to a silicon film 3 on a wafer 1 with the pattern of an organic resist 4 used as a mask, the surface of the resist 4 is coated with a silicon oxide containing silicon and oxygen deposited as a reaction product in that etching process. Although the thickness of a coat layer is very small, it completely shields a plasma and a resist, and it shows a similar effect to what is brought by using a silicon oxide film for an etching mask. That is, the etch rate of a silicon oxide is almost zero with the mixed gas plasma of a halogenide gas and oxygen, so that the coat layer continues to shield a plasma and a resist in a process of etching. Therefore, in spite of the progress of etching, the size and the thickness of an etching mask do not change and besides the reaction product deposited from a resist in a process of etching has no influence upon the plasma.;COPYRIGHT: (C)1993,JPO&Japio
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