BURIED GATE TYPE STATIC INDUCTION THYRISTOR WITH SILICON THIN FILM LAYER BALLAST RESISTOR

摘要

PURPOSE: To provide a buried gate type static induction thyristor in which a silicon thin film layer ballast resistor is disposed on each cathode region in addition to an inner ballast resistor. ;CONSTITUTION: A basic structure of an element having a ballast resistor for so suppressing an increase in current concentration for each unit cell as not to satisfy turn-on conditions even if current concentration occurs in the cell, and miniaturized in size near a channel width partly directly on a center line of a gate layer 8 as a pair with the layer 8 to selectively dispose an n⁺ type layer 4. Further, a silicon thin film layer 9' is interposed in contact with a predetermined position of the n⁺ type layer to a cathode electrode 9. The direction of the current passing through the channel is altered to a lateral direction, a relatively long current passage to the layer 4 is formed, effectively operated as a ballast resistor, the resistance value of the silicon thin layer ballast resistor can be set to a desired value, and a controllable ON-current resistance can be improved about twice as large as a conventional element.;COPYRIGHT: (C)1993,JPO&Japio