PLASMA-CLEANING METHOD OF SUBSTRATE SURFACE AND PHOTORESIST PLASMA CLEANING METHOD OF WAFER, AND CLEANING DEVICE OF SUBSTRATE SURFACE

摘要

PURPOSE: To rapidly and effectively avoid damages to a substrate and remove remaining substance after a resist removal by keeping energy-to-pressure ratio (E/P) of working power in a plasma cleaning at most 0.150. ;CONSTITUTION: A substrate 1 is mounted on a heater block, which functions as an RF anode for removing a photoresist and contaminant substance from a surface of the substrate 1, consisting of an Si wafer. After a reaction chamber 4 has been evacuated, a process gas containing oxygen and hydrocarbon fluoride is introduced. An RF power level E is selected and operated so as to optimize between an anode 2 and a cathode 3. A ratio E/P between RF power E expressed by wattage per unit volume (c←m³) of a plasma and a pressure P in units of Torr is selected to be less than 0.150.;COPYRIGHT: (C)1993,JPO