LARGE-CURRENT MOS TRANSISTOR INTEGRATED BRIDGE STRUCTURE FOR OPTIMIZATION OF CONTINUITY POWER LOSS

摘要

PURPOSE: To provide a large-current MOS transistor integrated bridge which is formed in a monolithic structure on a single Si substrate, optimizing a conduction power loss. CONSTITUTION: An N++ -type substrate 3, which includes at least two arms respectively comprised of first and second MOS Trs and which forms a positive potential output terminal K1, covered with an N- -type epitaxial layer 4. A bridge is comprised of a P and P+ -type insulating regions 13, 25 and 14, 16, including N+ -type drain regions 15, 16, N-type drain regions 19, 20 and a pair of N+ -type source regions 23, 24 forming continuously P-type main body regions 21, 22 and a negative potential output terminal with respect to each of the first Tr. The bridge also consists of an N+ -type drain regions 5, 6, including N-type drain regions 31, 32 with respect to each of the second Tr, continuously P-type main body regions 9, 10 and a pair of N+ -type regions 11, 12 forming respectively corresponding ac inputs A3, A4.