PURPOSE:To obtain high purity crystal having low impurity concentration wherein main component is carbon, by alernately supplying group III organic metal molecule and hydride containing group V element or organic metal molecule, on a substrate to be grown. CONSTITUTION:A main part is constituted of the following; trimethyl amine aluminum hydride (TMAAI) 1 being group III material, arsine 2 being group V material, a coater 3 for controlling the vapor pressure of TMAAI 1, a heater 4 for controlling the temperature of piping in which TMMAI 1 flows, a heater 7 for heating a substrate to be grown, and a stop valve 8 for controlling material gas supply. Hydrogen gas is used as the carrier gas of material gas, and the following sequence per cycle is repeated; TMMAI 1 supply:purge:arsine supply:purge = 1sec:3sec:1sec:3sec. Thereby carbon concentration in crystal is reduced, and many kinds of high purity compound semiconductor can be grown.
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