MANUFACTURE OF GERMANIUM-DOPED HYDROGENATED AMORPHOUS-SILICON THIN FILM

摘要

PURPOSE:To make it possible to form a dense irregular reticulation structure by a method wherein a process for deposition a germanium-doped hydrogenated amorphous-silicon thin film on specified conditions, and a process for treating the surface of the growth layer on specified conditions are alternately performed repeatedly. CONSTITUTION:In a first process, a film-forming substrate 1 is heated and held at 100 to 300 deg.C and while a germanium-doped hydrogenated amorphous- silicon growth layer 5 is formed on the substrate 1, the surface of the layer 5 is exposed to atomic hydrogens 2a and 2b produced by a decomposition means different from a glow discharge decomposition means using raw gas and a germanium-doped hydrogenated amorphous-silicon thin film 7 is deposited on the substrate 1. Then, in a second process, the supplys only of silane gas and germane gas are stopped to interrupt the decomposition of the thin film 7 and the surface of the layer 5 is exposed to the hydrogens 2a and 2b to treat. These first and second processes are alternately performed repeatedly. Thereby, a dense irregular reticulation structure, which has the uniform amount of hydrogen being contained in the film and has little defect in the structure, can be formed.