SEMICONDUCTOR SYNAPSE CIRCUIT AND ITS MANUFACTURE, SEMICONDUCTOR NEURON ELEMENT; AND SEMICONDUCTOR-SUPERCONDUCTOR COMPLEX NEURON ELEMENT

摘要

PURPOSE:To constitute a synapse circuit and a neuron element using it which improve the degree of integration and operational speed when compared with those of conventional elements by using the element which directly controls in an electrostatic manner the running direction of varistic charged carrier. CONSTITUTION:The charged carriers come out of emitter bottleneck areas 21-24 formed by a gate electrode 1 toward an acceptor electrode 40 with their outgoing direction limited are independently changed in their running directions by gate electrodes 31-34, and an acceptor bottleneck area 41 is weighed in terms of transmission assurance for synapse operation. The electric current flowing into the acceptor electrode 40 is converted into a voltage by resistance elements, etc., and by applying this voltage to the gate of a transistor, threshold value operation is obtained according to the amounts of the current flowing into the acceptor electrode 40. A synapse circuit can by far save an area when compared with that of conventional elements, so, the degree of integration and operational speed can be improved.