PURPOSE: To enable a measurement accuracy to be improved by improving scattering of a measurement value caused by a temperature difference which is generated between a measurement chamber and a storage portion of the measurement sample and deterioration of reproducibility. ;CONSTITUTION: A carrier - heating chamber 20 with a carrying-in window 21a and a carrying- out window 21b of a silicon wafer (a) is provided at one edge part of a side which is away from a container main body 10 of a measurement chamber 14 and an infrared rays lamp 22 and a reflection mirror 23 as a heating means for preheating the silicon wafer (a) before carrying it into the measurement chamber is provided at a ceiling part of this carrier-heating chamber 20. The infrared rays lamp 22 obtains a temperature difference of both by inputting a detection signal from temperature sensors 28a and 28b as a temperature-detection means for detecting temperature near a feed-side cassette 24 and within the measurement chamber 14 and is controlled by a means for setting an amount of heating which consists of a CPU for setting an amount of heating (heating time, temperature) for setting the temperature of the silicon wafer (a) to a same temperature as that within the measurement chamber 14 based on a size, a measurement mode, etc., of the silicon wafer and an infrared rays lamp controller which controls the infrared rays lamp 22 based on a signal from the CPU.;COPYRIGHT: (C)1993,JPO&Japio
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