首页>
外国专利>
Semiconductor memory device having precharge control circuit for prohibiting digit line pair from precharging after replacement with redundant digit line pair
Semiconductor memory device having precharge control circuit for prohibiting digit line pair from precharging after replacement with redundant digit line pair
展开▼
机译:具有预充电控制电路的半导体存储器件,用于防止在用冗余数字线对替换后对数字线对进行预充电
展开▼
页面导航
摘要
著录项
相似文献
摘要
A static type random access memory device is rescued from a defective digit line pair by replacing it with a redundant digit line pair (RDLP) coupled with redundant memory cells (RM1 to RMm) , and a precharging unit (14) supplies current to all of the digit line pairs and the redundant digit line pair even if the defective digit line pair is replaced with the redundant digit line pair, wherein precharging transistors (Q11/ Q12) coupled with the defective digit line pair are forcibly turned off by applying a constant voltage level (GND) to the gate electrodes thereof upon the replacement so that leakage current does not flow from the defective digit line pair into a ground voltage source.
展开▼