Non-volatile shadow storage cell with improved level shifting circuit and reduced tunnel device count for improved reliability

摘要

A non-volatile shadow memory cell utilizing a level shifting input/output circuit to charge and discharge at least a single Fowler-Nordheim tunneling element (20K), characterized in that said level shifting input/output circuit comprises a latching circuit (Q46K and Q50K), a coupling capacitor (C26K), a first drive transistor (Q44K) having a gate electrode connected to a first logic signal source (D) and a second drive transistor (Q48K) having a gate electrode connected to a second logic signal source (D).