Method for etching aluminium or aluminiums-alloys in the manufacture of semi-conductor devices

摘要

The present invention relates to a method for etching one of aluminum and aluminum alloy in a manufacturing process of a semiconductor device, and it is an object of the present invention to provide a method for manufacturing a semiconductor device in which no dust is generated, the selection ratio to SiO₂ and resist is high, and furthermore, it is made possible to perform patterning of one of aluminum and aluminum alloy with high accuracy.;One of aluminum and aluminum alloy is etched by means of gas obtained by mixing gas of chlorine interrelated group and gas of bromine interrelated group, and the mixed gas is one of mixed gas of Cℓ₂, BCℓ₃ and HBr, mixed gas of Cℓ₂, BCℓ₃ and BBr₃, mixed gas of Cℓ₂ and BBr₃ and mixed gas of BCℓ₃ and HBr. Further, one of aluminum and aluminum alloy is etched by mixed gas of HBr and BBr₃.