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High dielectric constant barium titanate ceramic dielectric composition containing zirconium oxide, manganese oxide and copper oxide

机译:包含氧化锆,氧化锰和氧化铜的高介电常数钛酸钡陶瓷介电组合物

摘要

The present invention provides a ceramic dielectric composition having a high dielectric constant of 5,000C or higher at room temperature and sintering at a low temperature of 1150C or lower in the production of a multilayer ceramic capacitor,3In order to increase the dielectric constant at room temperature and to sinter well at low temperature, we have studied various additives and various additives. Examples The present invention relates to a process for the preparation of barium titanate (BaTiO3), Calcium oxide (7-14 molar fraction) as the second component, and copper oxide (CuO or Cu3O) 0.05-2.5 weight percent zirconium oxide (ZrO3) And manganese oxide (MnO). The above composition was sintered in barium titanate mixed with calcium stearate to obtain a dielectric constant of 8.000 or more and a loss ratio of less than 2 percent at a sintering temperature of 1300C or higher and a densification at a low temperature of 1150C, Or more and a good temperature characteristic and a loss of 2% or less. Oxides, manganese oxides, and zirconium oxide among various additives promote sintering of dielectric ceramics and reduce the dielectric cabin. In addition, manganese oxide has some effect of suppressing grain growth, having a dense structure, and reducing dielectric loss. However, the addition of too much amount of oxidation or the like causes reduction of insulation resistance, poor dielectric loss, and microstructure flare. Therefore, when the present invention is applied to the production of a multilayer ceramic capacitor, it is possible to use a low-permittivity material having a high silver content.
机译:本发明提供在制造多层陶瓷电容器时,在室温下介电常数为5,000℃以上且在1150℃以下的低温下烧结的陶瓷介电组合物, 3 为了增加室温下的介电常数并在低温下良好烧结,我们研究了各种添加剂和各种添加剂。实施例本发明涉及钛酸钡(BaTiO 3 ),氧化钙(7-14摩尔分数)作为第二组分和氧化铜(CuO或Cu )的制备方法。 3 O)0.05-2.5重量百分比的氧化锆(ZrO 3 )和氧化锰(MnO)。将上述组合物在钛酸钡与硬脂酸钙混合中进行烧结,以在1300℃以上的烧结温度下获得8.000以上的介电常数,小于2%的损失率,以及在1150℃以下的低温下的致密化。具有良好的温度特性,且损耗小于或等于2%。各种添加剂中的氧化物,氧化锰和氧化锆促进电介质陶瓷的烧结并减少电介质室。另外,氧化锰具有抑制晶粒生长,具有致密结构并降低介电损耗的作用。但是,如果添加过多的氧化等,则绝缘电阻降低,电介质损耗变差,微结构耀斑化。因此,当将本发明应用于多层陶瓷电容器的制造时,可以使用具有高银含量的低介电常数材料。

著录项

  • 公开/公告号KR930012634A

    专利类型

  • 公开/公告日1993-07-20

    原文格式PDF

  • 申请/专利权人 경상현;

    申请/专利号KR19910023162

  • 发明设计人 김태홍;성희경;이재신;최태구;

    申请日1991-12-17

  • 分类号C04B35/46;

  • 国家 KR

  • 入库时间 2022-08-22 05:04:09

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