METHOD OF PREPARATION OF SAMPLES FOR ELECTRON DIFFRACTION AND ELECTRON MICROSCOPE STUDIES

摘要

use: in the u044du043bu0435u043au0442u0440u043eu043du043eu0433u0440u0430u0444u0438u0438 and electronic microscopy, in particular in the u0438u0441u0441u043bu0435u0434u043eu0432u0430u043du0438u00a0u0445 u043fu0440u0438u043fu043eu0432u0435u0440u0445u043du043eu0441u0442 structure of layers of metals, semiconductors, u0434u0438u044du043bu0435u043a even, u043au0435u0440u043cu0435u0442u043eu0432 and transitional layers of the material. the essence of the u0438u0437u043eu0431u0440u0435u0442u0435u043du0438u00a0: u0434u043bu00a0 full u0441u043eu0445u0440u0430u043du0435u043du0438u00a0 surface at the sample through the protection of u0432u043eu0437u0434u0435u0439u0441u0442u0432u0438u00a0 u0442u0440u0430u0432u0438u0442u0435u043bu043b in u0442u0440u0430u0432u043bu0435u043du0438u0438.u0441u043eu0437u0434u0430u044eu0442 excess the pressure.chemical inert fluid 100 to 200 pa from the surface under examination of the. u0440u0430u0437u0446u0430, u0442u0440u0430u0432u0438u0442u0435u043bu044c u043du0430u043du043eu0441u00a0u0442 on reverse pattern etching of lead to the u043fu043eu00a0u0432u043bu0435u043du0438u00a0 u043cu0438u043au0440u043eu043eu0442u0432u0435u0440u0441u0442u0438u0439, dilute u0442u0440u0430u0432u0438u0442u0435u043bu044c take reverse side model . 1).