Semiconductor integrated circuit with insulated regions for inserts - sepd. by zones of opposite conductivity to counteract effects of parasitic bipolar transistor currents

摘要

Three n-type insulation regions (1-3) are sepd. by p-type zones (4,5) continuous with the earthed substrate (6). The parasitic n-p-n transistors (TP1,Tp2) formed across the sepn. zones (4,5) have DC gain values of the order of 0.1. An isolated region (2) can incorporate a p-n-p transistor amplifier (tv) with an emitter (7) connected directly to the supply voltage (Us), and a collector (8). The base control electrode (S) is identical with the parasitic collector. USE/ADVANTAGE - In e.g. motor vehicle and video deflection circuits. Parasitic transistor effects are reduced and substrate loading is very much less than with conventional guard ring.