Patterned resist, esp. useful for integrated circuit prodn. - by forming and exposing single resist layer, followed by repeated silylation and etching steps to prevent side corrosion

摘要

A process (A) for producing a patterned resist (I) comprises (i) forming a resist layer (62), (ii) exposing a part (65) of the layer, (iii) silylating the exposed part (65), (iv) removing some but not all of the exposed area to uncover part of this area, (v) silylating the uncovered part (66') of the exposed area and (vi) removing the remainder (67) of the unexposed area. An alternative process (B) comprises (a) forming a resist layer, (b) exposing part of the layer, (c) silylating an unexposed part of the layer, (d) removing some but not all of the exposed area to uncover part of this area, (e) silylating the uncovered part of the unexposed area and (f) removing the rest of the exposed area. USE/ADVANTAGE - The process enables the prodn. of a fine resist pattern (with line widths and spacings below 1 micron) in a single-layer system, without the need to form a stack of several resist layers (e.g. to form different parts of a circuit element); lateral etching is prevented by the silanised layer, and the process involves 6 steps compared with about 10 in prior-art processes. The process is useful esp. for the prodn. of integrated circuit elements on Si chips.