首页> 外国专利> Patterned resist, esp. useful for integrated circuit prodn. - by forming and exposing single resist layer, followed by repeated silylation and etching steps to prevent side corrosion

Patterned resist, esp. useful for integrated circuit prodn. - by forming and exposing single resist layer, followed by repeated silylation and etching steps to prevent side corrosion

机译:图案抗蚀剂,特别是。对集成电路产品有用。 -通过形成和暴露单个抗蚀剂层,然后重复硅烷化和蚀刻步骤以防止侧面腐蚀

摘要

A process (A) for producing a patterned resist (I) comprises (i) forming a resist layer (62), (ii) exposing a part (65) of the layer, (iii) silylating the exposed part (65), (iv) removing some but not all of the exposed area to uncover part of this area, (v) silylating the uncovered part (66') of the exposed area and (vi) removing the remainder (67) of the unexposed area. An alternative process (B) comprises (a) forming a resist layer, (b) exposing part of the layer, (c) silylating an unexposed part of the layer, (d) removing some but not all of the exposed area to uncover part of this area, (e) silylating the uncovered part of the unexposed area and (f) removing the rest of the exposed area. USE/ADVANTAGE - The process enables the prodn. of a fine resist pattern (with line widths and spacings below 1 micron) in a single-layer system, without the need to form a stack of several resist layers (e.g. to form different parts of a circuit element); lateral etching is prevented by the silanised layer, and the process involves 6 steps compared with about 10 in prior-art processes. The process is useful esp. for the prodn. of integrated circuit elements on Si chips.
机译:用于制造图案化的抗蚀剂(I)的方法(A)包括:(i)形成抗蚀剂层(62),(ii)暴露该层的一部分(65),(iii)使暴露的部分(65)甲硅烷基化,( iv)去除一些但不是全部的暴露区域以暴露该区域的一部分,(v)使暴露区域的未覆盖部分(66')甲硅烷基化,和(vi)移除未暴露区域的其余部分(67)。替代方法(B)包括(a)形成抗蚀剂层,(b)暴露该层的一部分,(c)使该层的未暴露的部分甲硅烷基化,(d)去除一些但不是全部的暴露区域以暴露部分在该区域中,(e)使未曝光区域的未覆盖部分甲硅烷基化,和(f)去除其余的曝光区域。使用/优势-该过程启用产品。在单层系统中形成精细的抗蚀剂图案(线宽和间距小于1微米),而无需形成多个抗蚀剂层的堆叠(例如形成电路元件的不同部分);硅烷化层可防止横向蚀刻,该工艺涉及6个步骤,而现有技术中约为10个。该过程特别有用。为产品Si芯片上的集成电路元件的数量。

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