Vapor-phase epitaxial growth process by a hydrogen pretreatment step followed by decomposition of disilane to form monocrystalline Si film

摘要

The present invention provides a process for the vapor-phase epitaxial growth of a Si single crystal film on a Si single crystal substrate using diluted disilane, in which the process is carried out at a linear speed of diluted disilane on the surface of the Si single crystal substrate is in the range of 5 to 100 cm/min. and, as desired, the substrate is subjected to the heat pretreatment in a hydrogen stream at a temperature of 1,000° C. or higher for a period of 30 minutes or longer before the epitaxial growth.