首页> 外国专利> The plasma the purazumapatsushibe - Shaun technology null which prevents the attack after the etching treating of the aluminum film which is etched

The plasma the purazumapatsushibe - Shaun technology null which prevents the attack after the etching treating of the aluminum film which is etched

机译:等离子体purazumapatsushibe-Shaun技术无效,可防止对蚀刻的铝膜进行蚀刻处理后的腐蚀

摘要

A method for preventing the post-etch corrosion of aluminum or aluminum alloy film which has been etched utilizing chlorinated plasma wherein the etched film is exposed to fluorinated plasma.
机译:一种用于防止已经使用氯化等离子体蚀刻的铝或铝合金膜的蚀刻后腐蚀的方法,其中将蚀刻的膜暴露于氟化等离子体。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号